Datasheet Summary
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
V(BR)DSS 1200 V
RDS(ON) MAX 30 mW @ 18 V
ID MAX 89 A
Features
- Typ. RDS(on) = 22 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 137 nC)
- High Speed Switching with Low Capacitance (Coss = 146 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with Exemption 7a,
Pb- Free 2LI (on Second Level Interconnection)
Typical Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter...