NTH4L025N065SC1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V

* Ultra Low Gate Charge (QG(tot) = 164 nC)

* Low Capacitance (Coss = 278 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Compliant with exemption 7a, P

NTH4L025N065SC1

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Sic mosfet.

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NTH4L025N065SC1 SiC MOSFET ON Semiconductor

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