NTH4L040N120M3S
NTH4L040N120M3S is SiC MOSFET manufactured by onsemi.
Silicon Carbide (Si C) MOSFET
- Elite Si C, 40 mohm, 1200 V, M3S, TO-247-4L NTH4L040N120M3S
Features
- Typ. RDS(on) = 40 m W @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 75 n C)
- High Speed Switching with Low Capacitance (Coss = 80 p F)
- 100% Avalanche Tested
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 10/+22 V
Remended Operation Values TC<175°C VGSop
- 3/+18 V of Gate- to- Source Voltage
Continuous Drain
Steady TC=25°C
Current (Notes 1, 3)
State
Power Dissipation (Note 1)
Continuous...
