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MOSFET – Power, Single, P-Channel, Schottky Diode, Schottky Barrier Diode
-30 V, -4.0 A, 20 V, 2.2 A
NTMD4184PF
Features
FETKYt Surface Mount Package Saves Board Space Independent Pin−Out for MOSFET and Schottky Allowing for
Design Flexibility
Low RDS(on) MOSFET and Low VF Schottky to Minimize
Conduction Losses
Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device
Applications
Disk Drives DC−DC Converters Printers
MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Rating
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage
VGS
20
V
Continuous Drain Current RqJA (Note 1)
TA = 25C
ID
TA = 70C
−3.3
A
−2.6
Power Dissipation RqJA (Note 1)
TA = 25C
PD
1.
NTMD4184PF Datasheet
