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NTMD4884NF - Power MOSFET and Schottky Diode

Features

  • 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode.
  • ăFETKYt Surface Mount Package Saves Board Space.
  • ăIndependent Pin-Out for MOSFET and Schottky Allowing for Design Flexibility.
  • ăLow RDS(on) MOSFET and Low VF Schottky to Minimize Conduction Losses.
  • ăOptimized Gate Charge to Minimize Switching Losses.
  • ăThis is a Pb-Free Device.

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Datasheet Details

Part number NTMD4884NF
Manufacturer onsemi
File Size 118.90 KB
Description Power MOSFET and Schottky Diode
Datasheet download datasheet NTMD4884NF Datasheet
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NTMD4884NF Power MOSFET and Schottky Diode Features 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode •ăFETKYt Surface Mount Package Saves Board Space •ăIndependent Pin-Out for MOSFET and Schottky Allowing for Design Flexibility •ăLow RDS(on) MOSFET and Low VF Schottky to Minimize Conduction Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device Applications V(BR)DSS 30 V www.DataSheet4U.com http://onsemi.com N-CHANNEL MOSFET RDS(on) Max 48 mW @ 10 V 70 mW @ 4.5 V ID Max 5.
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