NVBG190N65S3F Datasheet - ON Semiconductor

N-Channel MOSFET

NVBG190N65S3F Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 158 mW

* Ultra Low Gate Charge (Typ. Qg = 36 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 339 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* These Devices are Pb

NVBG190N65S3F General Description

SUPERFET® III MOSFET is onsemi’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide.

NVBG190N65S3F Datasheet (231.31 KB)