* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Driver Losses
* Optimized Gate Charge to Minimize Switching Losses
* AEC
* Q101 Qualified and PPAP Capable
* NVMFS4C310NWF
* Wettable Flanks Option for Enhanced Optical Ins
NVMFS4C310N Datasheet (288.13 KB)
NVMFS4C310N
288.13 KB
N-channel power mosfet.
DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 6.0 mW, 51 A NVMFS4C310N V(BR)DSS 30 V RDS(ON) MAX 6.0 mW @ 10 V 9.0 m.
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