* 3 mW / 1200 V M3S SiC MOSFET Half
* Bridge
* HPS DBC
* Thermistor
* Pre
* Applied Thermal Interface Material (TIM)
* Press
* Fit Pins
* These Devices are Pb
* Free, Halide Free and are RoHS Compliant Typical Applications
NXH003P120M3F2PTHG Datasheet (2.19 MB)
NXH003P120M3F2PTHG
2.19 MB
Sic.
Silicon Carbide (SiC) Module EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC NXH003P120M3F2PTHG.
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