Datasheet Summary
Diode
- Power, Bare Die
Gen VII, Fast Recovery 1200 V, 30 A
Features
- Advanced Gen VII Technology
- Fast and Soft Recovery
- Maximum Junction Temperature 175°C
- Low Forward Voltage: VF = 1.78 V (Typ.) @ IF = 30 A
- Easy to Parallel Operation
Typical Applications
- Solar
- Energy Storage
- Industrial Motor Control
MECHANICAL PARAMETERS
Parameter Die Size (w/ Scribe Lane) Anode Pad Size Scribe Lane Width Die Thickness Top Metal
Value
Unit
2,970 x 4,500 mm2
1,987 x 3,517 mm2
80 mm
119 mm
6 mm AlSiCu
Back Metal Topside Passivation Wafer Diameter
1.65 mm Ti/NiV/Ag Silicon Nitride plus Polyimide
200 mm
Max Possible Die Per Wafer
Remended Storage...