BF620 transistor equivalent, npn silicon high voltage medium-power transistor.
Ø Low Saturation Voltages V =CE(sat) 0.6 V V =BE(sat) 0.9 V
Ø High Breakdown Voltages V =(BR)CBO 300 V V =(BR)CEO 300 V
Ø Low Collector Current IC= 50 mA
Ø Complementary .
It has dynamic range and good current characteristic. This high voltage transistor in 3-Pin mini power plastic package .
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