PJP12N65 Description
PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET.
PJP12N65 Key Features
- 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .0 0.8 10 +1 0 0
- VDD=325V, I D =12A V GS =1 0 V, RG=25Ω
- 450 5 .0
- A A V ns uC