PJP1N80 Description
PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET.
PJP1N80 Key Features
- 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A
- Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened f
- Case: TO-220AB / TO-251 Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 4 .4 16 10 +1 0 0
- t d (o n) tr t d (o ff) tf C C C
- 160 0 .3
- A A V ns uC