2SK1606 transistors equivalent, field effect transistors.
q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic
unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
s .
16.7±0.3
7.5±0.2
q High-speed switching (switching power supply) q For high-frequency power amplification
φ3.1±0.1
s.
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