q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1262 base voltage 2SD1262A
VCBO
60 80
Collector to 2SD1262 emitter voltage 2SD1262A
VCEO
60 80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO IC.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
D1262. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 8.5±0.2 6.0±0...
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peed power switching Complementary to 2SB939 and 2SB939A 8.5±0.2 6.0±0.5 Unit: mm 3.4±0.3 1.0±0.1 10.0±0.3 1.5±0.1 s Features q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to 2SD1262 base voltage 2SD1262A VCBO 60 80 Collector to 2SD1262 emitter voltage 2SD1262A VCEO 60 80 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC 7 12 8 45 1.
D1262 Datasheet
