* y Low drain-source ON resistance:Rds(on) typ. = 13 mΩ（VGS = 4.5 V) y Built-in gate resistor y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
* Marking Symbol: 4D
* Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
FC8V22080L Datasheet (262.19 KB)
FC8V22080L
Panasonic
262.19 KB
Gate resistor installed dual n-channel mos fet.
DReovcisNioon. . T3 T4-EA-14491 FC8V22080L Gate resistor installed Dual N-channel MOS FET For lithium-ion secondary battery protection circuits <.
📁 Related Datasheet
FC8V3303 Silicon N-channel MOS FET (Panasonic)
FC8V33030L Dual N-channel MOSFET (Panasonic)
FC801 Composite Diode for High-Speed Switching Applications (Sanyo Semicon Device)
FC802 Composite Diode for High-Speed Switching Applications (Sanyo Semicon Device)
FC803 30V/ 70mA Rectifier (Sanyo Semicon Device)
FC804 30V/ 200mA Rectifier (Sanyo Semicon Device)
FC805 30V/ 500mA Rectifier (Sanyo Semicon Device)
FC806 50V/ 100mA Rectifier (Sanyo Semicon Device)
FC807 High-Speed Switching Composite Diode Anode Common (Sanyo Semicon Device)
FC808 High-Speed Switching Composite Diode Cathode Common (Sanyo Semicon Device)
