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2SA1961 - Silicon PNP epitaxial planer type Transistor

Features

  • q 0.65 max. 1.0 1.0 0.2 High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • (Ta=25˚C) Ratings.
  • 200.
  • 200.
  • 5.
  • 0.1.
  • 70 1 150.
  • 55 ~ +150 1cm2 Unit V V V A mA W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+.
  • 0.05 0.45.
  • 0.05 +0.

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Datasheet Details

Part number 2SA1961
Manufacturer Panasonic Semiconductor
File Size 37.20 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SA1961 Datasheet
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Full PDF Text Transcription

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Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q 0.65 max. 1.0 1.0 0.2 High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –200 –200 –5 – 0.1 –70 1 150 –55 ~ +150 1cm2 Unit V V V A mA W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 0.45–0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2.5±0.5 1 2 2.5±0.
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