Datasheet Details
| Part number | 2SA1964 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.25 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1964-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1964.
| Part number | 2SA1964 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.25 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1964-INCHANGE.pdf |
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|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC5248 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1.5 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1964 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
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