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2SA1964 - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SC5248 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

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isc Silicon PNP Power Transistor 2SA1964 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC5248 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1.5 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.