2SB968 Datasheet PDF (PNP Transistor) | Download Panasonic Semiconductor 2SB968

2SB968 - PNP Transistor

Features

7.3± 0.1 1.8± 0.1 Unit µA µA µA V V.
50.
40 50 220.
1.
1.5 150 45 VCE(sat) VBE(sat) fT Cob V V MHz pF.
h FE Rank classification P 50 to 100 Q 80 to 160 R 120 to 220 Rank hFE 1 Power Transistors PC.
Ta 32.
4.0 TC=Ta 28.
3.5 2SB968 IC.
VCE TC=25˚C IB=.
40mA.
35mA VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V).
10 IC/IB=10 Collector power dissipation PC (W) Collec.

Datasheet Details

Part number	2SB968
Manufacturer	Panasonic Semiconductor
File Size	53.77 KB
Description	PNP Transistor
Datasheet	2SB968 Datasheet
Additional preview pages of the 2SB968 datasheet.

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Full PDF Text Transcription

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Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1295 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C) Ratings –50 –40 –5 –3 –1.5 20 150 –55 to +150 Unit V V V A A W 0.6 2.3 2.3 0.75 6.5±0.

Published: Mar 22, 2005 |