* High-speed switching φ 3.2±0.1 15.0±0.5
* High collector-base voltage (Emitter open) VCBO
* Wide safe operation area
* Satisfactory linearity of forward current transfer ratio hFE
* Dielectric breakdown voltage of the package: > 5 kV 1.4±0.2 1.6±0.2
2SC4953
Panasonic Semiconductor
217.77 KB
Npn transistor.
Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2.
📁 Related Datasheet
2SC495 Silicon NPN Transistors (Toshiba)
2SC4953 NPN Transistor (INCHANGE)
2SC4954 NPN TRANSISTOR (NEC)
2SC4955 NPN TRANSISTOR (NEC)
2SC4956 NPN TRANSISTOR (NEC)
2SC4957 NPN TRANSISTOR (NEC)
2SC4957 NPN EPITAXIAL SILICON RF TRANSISTOR (Renesas)
2SC4958 NPN TRANSISTOR (NEC)
2SC4959 NPN TRANSISTOR (NEC)
2SC4900 NPN TRANSISTOR (Hitachi Semiconductor)
