* 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE / s Absolute Maximum Ratings (TC=25˚C) 1 2 3 1
2SC5457
Panasonic Semiconductor
185.65 KB
Npn transistor.
Power Transistors 2SC5457 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 6.5±0.1 5.3±0.1 4.35±0.1 Unit: mm.
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