* High forward current transfer ratio hFE
* Low collector to emitter saturation voltage VCE(sat)
* High emitter to base voltage VBEO
* SS-mini type package 0.12+0.03
* 0.01 3 1.60±0.05 0.85+0.05
* 0.03 (0.375) 1 0.27±0.02 2 (0.80) (0.50)(0.50) 0 to
2SD2620J
Panasonic Semiconductor
43.56 KB
Silicon npn transistor.
Transistors 2SD2620J Silicon NPN epitaxial planer type Unit: mm 1.60+0.05 0.03 1.00±0.05 0.80±0.05 For low-frequency amplification I Featur.
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