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Panasonic Electronic Components Datasheet

2SD661 Datasheet

Silicon NPN Transistor

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Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SD661
base voltage 2SD661A
Collector to 2SD661
emitter voltage 2SD661A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
35
55
35
55
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SD661
2SD661A
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
0.1 µA
1 µA
35
V
55
Collector to emitter 2SD661
voltage
2SD661A
VCEO
IC = 2mA, IB = 0
35
55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
IE = 10µA, IC = 0
7
V
VCE = 10V, IC = 2mA
210 650
IC = 100mA, IB = 10mA
1V
VCB = 10V, IE = –2mA, f = 200MHz 200 MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 210 ~ 340
S
290 ~ 460
T
360 ~ 650
1


Panasonic Electronic Components Datasheet

2SD661 Datasheet

Silicon NPN Transistor

No Preview Available !

Transistor
PC — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IB — VBE
800
VCE=5V
Ta=25˚C
700
600
500
400
300
200
100
0
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
hFE — IC
720
VCE=5V
600
Ta=75˚C
480
25˚C
360
–25˚C
240
120
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
IC — VCE
160
Ta=25˚C
140
120 IB=350µA
300µA
100
250µA
80
200µA
60 150µA
40 100µA
20 50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD661, 2SD661A
IC — IB
160
VCE=5V
Ta=25˚C
140
120
100
80
60
40
20
0
0 0.1 0.2 0.3 0.4 0.5
Base current IB (mA)
IC — VBE
120
25˚C
VCE=5V
100
Ta=75˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
500 VCB=5V
Ta=25˚C
400
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
0.1 25˚C
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
20
IE=0
f=1MHz
Ta=25˚C
16
300 12
200 8
100 4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
2


Part Number 2SD661
Description Silicon NPN Transistor
Maker Panasonic Semiconductor
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2SD661 Datasheet PDF






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