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2SD661 - Silicon NPN Transistor

Features

  • q q q 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 7 200 100 400 150.
  • 55 ~ +150 Unit 3 2 1 V 2.5 2.5 emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC.
  • 71 M Type Mold Package s Electrical Characteristics P.

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Datasheet Details

Part number 2SD661
Manufacturer Panasonic
File Size 51.23 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD661 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 7 200 100 400 150 –55 ~ +150 Unit 3 2 1 V 2.5 2.
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