2SD661
2SD661 is Silicon PNP Transistor manufactured by Panasonic.
Features q q q
1.5 R0.9 R0.9
Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 35 55 35 55 7 200 100 400 150
- 55 ~ +150
Unit
3 2 1
2.5 2.5 emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V m A m A m W ˚C ˚C
1:Base 2:Collector 3:Emitter
EIAJ:SC- 71 M Type Mold Package s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD661 2SD661A 2SD661 2SD661A
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO h FE- VCE(sat) f T NV Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2m A, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2m A IC = 100m A, IB = 10m A VCB = 10V, IE =
- 2m A, f = 200MHz VCE = 10V, IC = 1m A, GV = 80d B Rg = 100kΩ, Function = FLAT 200 150 35 55 35 55 7 210 650 1 V MHz m V min typ max 0.1 1 Unit µA µA V
1.25±0.05 s Absolute Maximum Ratings
(Ta=25˚C)
0.55±0.1
0.45±0.05
4.1±0.2
Low noise voltage NV. High foward current transfer ratio h FE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
0.
4.5±0.1
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage
- h
Rank classification
R 210 ~ 340 S 290 ~ 460 T 360 ~ 650 h FE
Rank
Transistor
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