Datasheet Summary
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q
1.5 R0.9 R0.9
Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 35 55 35 55 7 200 100 400 150
- 55 ~ +150
Unit
3 2 1
2.5 2.5 emitter voltage 2SD661A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
EIAJ:SC- 71 M Type Mold Package s Electrical Characteristics
Parameter Collector cutoff current...