* q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) Ratings 250 400 200 400 5 100 70 600 150
* 55 ~ +150 Unit 3 0.55±0.1 1.25±0.05 0.45±0.05 2 1 V 2.5 2.5 emitter
2SD662B
Panasonic Semiconductor
39.42 KB
Silicon npn transistor.
Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2..
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