2SK0601
2SK0601 is Silicon N-Channel MOS FET manufactured by Panasonic.
Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
0.4max.
45˚
1.0- 0.2
+0.1
0.4±0.08
4.0- 0.20 s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
- 0.5±0.08 1.5±0.1 3.0±0.15
0.4±0.04
Symbol VDS VGSO ID IDP PD
- Ratings 80 20 ±0.5 ±1 1 150
- 55 to +150
Unit
3 2 1
V V A A W °C °C
1: Gate 2: Drain 3: Source EIAJ: SC-62 Mini-Power Type Package (3-pin) marking
Tch Tstg
Marking Symbol: O
PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton- 2 toff
- 2
- 1
Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100µA, VGS = 0 ID = 1m A, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1k Hz VDS = 10V, VGS = 0, f = 1MHz min typ max 10 0.1
Unit µA µA V
80 1.5 2 300 45 30 8 15 20 3.5 4
V Ω m S p F p F p F ns ns
Input capacitance (mon Source) Ciss Output capacitance (mon Source) Reverse transfer capacitance (mon Source) Crss Turn-on time Turn-off time
- 1
- 2
Pulse measurement ton, toff measurement circuit
Vout Vin = 10V 68Ω 50Ω VDD = 30V Vin Vout 10% Vin 10% 90% t = 1µS f = 1MHZ
90% V out ton toff
2.5±0.1
+0.25
Silicon MOS FETs (Small...
