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Panasonic Electronic Components Datasheet

2SK2211 Datasheet

Silicon N-Channel MOS FET

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Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
For switching
4.5±0.1
1.6±0.2
Unit : mm
1.5±0.1
s Features
Low ON-resistance RDS(ON)
High-speed switching
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation *
Channel temperature
Storage temperature
VDS
VGSO
ID
IPD
PD
Pch
Tstg
30
±20
±1
±2
1
150
55 to +150
V
V
A
A
W
°C
°C
Note) * PC board: Copper foil of the drain portion should have a area of
1 cm2 or more and the board thickness should be 1.7 mm.
45˚
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
0.4±0.04
marking
1: Gate
2: Drain
3: Source
Mini-Power Type Package (3-pin)
Marking Symbol: 2M
Internal Connection
G
D
s Electrical Characteristics Ta = 25°C
Parameter
Symbol
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate to Source voltage
Gate threshold voltage
Drain to Source ON-resistance *
Forward transfer admittance
IDSS
IGSS
VDSS
VGSS
Vth
RDS(ON)1
RDS(ON)2
Yfs
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Ciss
Coss
Crss
tON
tf
tOFF
Note) *: Pulse measurement
Conditions
VDS = 25 V, VGS = 0
VGS = ±15 V, VDS = 0
ID = 0.1 mA, VGS = 0
IGS = 0.1 mA, VDS = 0
VDS = 5 V, ID = 1 mA
VGS = 4 V, ID = 0.5 A
VGS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0, f = 1 MHz
VGS = 10 V, ID = 0.5 A, VDD = 10 V
RL = 10
S
Min Typ Max
10
±10
30
±20
0.8 2
0.48 0.75
0.35 0.6
0.5
87
69
23
12
160
60
Unit
µA
µA
V
V
V
S
pF
pF
pF
ns
ns
ns
1


Panasonic Electronic Components Datasheet

2SK2211 Datasheet

Silicon N-Channel MOS FET

No Preview Available !

2SK2211
Silicon MOS FETs (Small Signal)
ID VDS
3.0
Ta = 25°C
2.5
VGS = 3.5 V
2.0
1.5
3.0 V
1.0
2.5 V
0.5
2.0 V
0
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
RDS ID
1.4
Ta = 25°C
1.2
1.0
0.8
0.6 VGS = 4 V
0.4 10 V
0.2
0
0 0.5 1.0 1.5 2.0 2.5
Drain current ID (A)
ID VDS
3.0
VDS =10 V
Ta = 25°C
2.5
2.0
1.5
1.0
0.5
0
0123456
Gate to source voltage VGS (V)
Yfs  ID
1.6
VDS = 10 V
1.4 f = 1 kHz
Ta = 25°C
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.5 1.0 1.5 2.0 2.5
Drain current ID (A)
RDS VDS
1.6
ID = 0.5 A
Ta = 25°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
Ciss, Coss, Crss VDS
140
f = 1 MHz
Ta = 25°C
120
100
80
Ciss
60
Coss
40
20
Crss
0
0.3 1 3 10 30 100 300
Drain to source voltage VDS (V)
2


Part Number 2SK2211
Description Silicon N-Channel MOS FET
Maker Panasonic Semiconductor
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2SK2211 Datasheet PDF






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