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2SK2380 Datasheet - Panasonic Semiconductor

2SK2380 Silicon N-Channel MOSFET

Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Parameter Gate to Drain voltage Gate to Source voltage Drain cur.

2SK2380 Features

* V mS pF pF pF 1 Silicon Junction FETs (Small Signal) PD  Ta 150 240 Ta=25˚C 125 200 200 VGS=0.4V 2SK2380 ID  VDS 240 VDS=10V ID  VGS Allowable power dissipation PD (mW) Drain current ID (µA) 100 160 Drain current ID (µA) 160 75 120 0.2V 0V 120 50 80

* 0.2V

* 0.4V

2SK2380_PanasonicSemiconductor.pdf