* V mS pF pF pF 1 Silicon Junction FETs (Small Signal) PD Ta 150 240 Ta=25˚C 125 200 200 VGS=0.4V 2SK2380 ID VDS 240 VDS=10V ID VGS Allowable power dissipation PD (mW) Drain current ID (µA) 100 160 Drain current ID (µA) 160 75 120 0.2V 0V 120 50 80
* 0.2V
* 0.4V
2SK2380
Panasonic Semiconductor
31.69 KB
Silicon n-channel mosfet.
Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.4 unit: .
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