MIP301 ic equivalent, silicon mos ic.
q 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip q 5V and 3 - 5W output with 24VDC input (Flyback method)
unit: mm
0.6±0.3 0.4.
1.27 0.1±0.1 0.3
q IPD for DC/DC converter
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter Drain voltage Control .
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