* 1 Composite Transistors PT
* Ta 500 XN111F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE
* 240
* 100 VCE(sat)
* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE
XN111F
Panasonic Semiconductor
34.17 KB
Silicon pnp epitaxial planer transistor.
Composite Transistors XN111F Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.0.
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