* 1 Composite Transistors PT
* Ta 240 120 Ta=25˚C XN1509 IC
* VCE 60 VCE=10V 50 25˚C Ta=75˚C 40
* 25˚C IC
* VBE Total power dissipation PT (mW) 200 100 Collector current IC (mA) 160 80 IB=300µA 250µA 200µA 150µA 100µA Collector current IC (mA) 120 60 30 8
XN1509
Panasonic Semiconductor
31.82 KB
Silicon npn epitaxial planer transistor.
Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.
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