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Panasonic Electronic Components Datasheet

XN1531 Datasheet

Silicon NPN epitaxial planer transistor

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Composite Transistors
XN1531
Silicon NPN epitaxial planer transistor
For high frequency, oscillation and mixing
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SC3130 × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
15
10
3
50
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 9F
Internal Connection
Tr1
5
1
4
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
hFE2/hFE1 ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Collector to base parameter
Common base reverse transfer capacitance
*1 Ratio between 2 elements
VCEO
VEBO
ICBO
ICEO
hFE
hFE (small/large)*1
hFE2/hFE1
VCE(sat)
Cob
fT
rbb'·CC
Crb
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = 0
VCE = 10V, IB = 0
VCE = 4V, IC = 5mA
VCE = 4V, IC = 5mA
VCE = 4V, IC = 100µA
VCE = 4V, IC = 5mA
IC = 20mA, IB = 4mA
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = –5mA, f = 200MHz
VCB = 4V, IE = –5mA, f = 30MHz
VCB = 4V, IE = 0, f = 1MHz
3
min
10
3
75
0.5
0.75
1.4
2
Tr2
typ max Unit
V
V
1 µA
10 µA
200 400
0.99
1.6
0.5 V
0.9 1.1 pF
1.9 2.5 GHz
11.8 13.5
ps
0.25 0.35
pF
1


Panasonic Electronic Components Datasheet

XN1531 Datasheet

Silicon NPN epitaxial planer transistor

No Preview Available !

Composite Transistors
PT — Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3 Ta=75˚C
0.1 25˚C
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
1.6
f=1MHz
1.4 IE=0
Ta=25˚C
1.2
1.0
0.8
0.6
0.4
0.2
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
80
Ta=25˚C
60
IB=500µA
40 400µA
300µA
200µA
20
100µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
360
VCE=4V
300
Ta=75˚C
240
25˚C
180
120 –25˚C
60
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
XN1531
IC — VBE
60
25˚C
VCE=4V
50
Ta=75˚C –25˚C
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
4.0
VCB=4V
Ta=25˚C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2


Part Number XN1531
Description Silicon NPN epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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