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Panasonic Electronic Components Datasheet

XN1871 Datasheet

Silicon N-channel junction FET

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Composite Transistors
XN1871
Silicon N-channel junction FET
For amplification of the low frequency
s Features
q Two elements incorporated into one package.
(Soure-coupled FETs)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SK198 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Drain to source voltage
Rating Gate to drain voltage
of
element Drain current
Gate current
Total power dissipation
Overall Channel temperature
Storage temperature
VDSX
VGDO
ID
IG
PT
Tch
Tstg
30
–30
20
10
300
150
–55 to +150
Unit
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Gate (Tr1)
2 : Gate (Tr2)
3 : Drain (Tr2)
4 : Source
5 : Drain (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 5T
Internal Connection
FET 1
5
1
4
32
FET 2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Drain current
Gate cutoff current
Gate to source cutoff voltage
Mutual conductance
IDSS
IGSS
VGSC
gm
gm
Common source short-circuit input capacitance Ciss
Common source reverse transfer capacitance Crss
VDS = 10V, VGS = 0
0.5 12 mA
VGS = –30V, VDS = 0
–100 nA
VDS = 10V, ID = 10µA
– 0.1
–1.5 V
VDS = 10V, ID = 0.5mA, f = 1MHz
4
mS
VDS = 10V, VGS = 0V, f = 1MHz
4 12
mS
VDS = 10V, VGS = 0V, f = 1MHz
14 pF
VDS = 10V, VGS = 0V, f = 1MHz
3.5 pF
Noise voltage
NV
VDS = 30V, ID = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
60 mV
1


Panasonic Electronic Components Datasheet

XN1871 Datasheet

Silicon N-channel junction FET

No Preview Available !

Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
gm — VGS
20 VDS=10V
18 Ta=25˚C
16
14
12
IDSS=5.0mA
10
8
2.0mA
6
4
2
0
– 0.8
– 0.6
– 0.4
– 0.2
0
Gate to source voltage VGS (V)
Crss — VDS
5
VGS=3V
f=1MHz
Ta=25˚C
4
3
2
1
0
1 2 3 5 10 20 30 50 100
Drain to source voltage VDS (V)
ID — VDS
8
Ta=25˚C
7
6
VGS=0V
5
4
– 0.1V
3
2 –0.2V
1 –0.3V
– 0.4V
0
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
gm — ID
20 VDS=10V
18 Ta=25˚C
16
IDSS=5.0mA
14
12
2.0mA
10
8
6
4
2
0
02468
Drain current ID (mA)
NF — f
12
VDS=10V
ID=5.2mA
Ta=25˚C
10
8
6
4
Rg=500
2
1k
0
10 100 1k 10k 100k
Frequency f (Hz)
XN1871
ID — VGS
9.6
VDS=10V
8.0
6.4
4.8
Ta=75˚C
3.2
25˚C
– 25˚C
1.6
0
–1.0 –0.8 –0.6 –0.4 –0.2
0
Gate to source voltage VGS (V)
Ciss, Coss — VDS
10
VGS=–3V
f=1MHz
Ta=25˚C
8
6
Ciss
4
2 Coss
0
1 2 3 5 10 20 30 50 100
Drain to source voltage VDS (V)
2


Part Number XN1871
Description Silicon N-channel junction FET
Maker Panasonic Semiconductor
Total Page 2 Pages
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