XN1872
Panasonic Semiconductor
32.08 KB
Silicon n-channel . enhancement mos fet.
Composite Transistors
XN1872
Silicon N-channel
* Enhancement MOS FET
Unit: mm
For switching
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05 5
0.65.
* 1 Composite Transistors PT
* Ta 500 120 Ta=25˚C XN1872 ID
* VDS 120 VDS=5V 100 VGS=6.0V 80 5.5V 5.0V 4.5V 40 ID
* VGS Total power dissipation PT (mW) 400 100 Drain current ID (mA) Drain current ID (mA) 80 Ta=
* 25˚C 25˚C 300 60 60 75˚C 200 4.0V 3.5V 3.0
📁 Related Datasheet
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Composite Transistors
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Silicon N-channel junction FET
Unit: mm
For amplification of the low frequency
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05.
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