* 1 Composite Transistors PT
* Ta 500 8 Ta=25˚C 7 XN1871 ID
* VDS 9.6 VDS=10V 8.0 ID
* VGS Total power dissipation PT (mW) 400 Drain current ID (mA) VGS=0V 5 4
* 0.1V 3 2 1
* 0.2V
* 0.3V
* 0.4V Drain current ID (mA) 6 6.4 300 4.8 Ta=75˚C
XN1871
Panasonic Semiconductor
31.94 KB
Silicon n-channel junction fet.
Composite Transistors
XN1871
Silicon N-channel junction FET
Unit: mm
For amplification of the low frequency
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.05.
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+0.2 +0.25
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