* +0.1 +0.1 1 Composite Transistors PT
* Ta 500 XN421F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 240 100 VCE(sat)
* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE
XN421F
Panasonic Semiconductor
33.71 KB
Silicon npn epitaxial planer transistor.
Composite Transistors XN421F Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 2.8 0.3 +0.2 +0.25.
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