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Panasonic Electronic Components Datasheet

XN421L Datasheet

Silicon NPN epitaxial planer transistor

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Composite Transistors
XN421L
Silicon NPN epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q UN121L × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating Collector to base voltage
of Collector to emitter voltage
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: DI
Internal Connection
Tr1
6
1
52
4
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1/R2
fT
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1k
VCC = 5V, VB = 2.5V, RL = 1k
VCB = 10V, IE = –2mA, f = 200MHz
min
50
50
20
4.9
–30%
0.8
3
Tr2
typ max Unit
V
V
0.1 µA
0.5 µA
2.0 mA
0.25 V
V
0.2 V
4.7 +30% k
1.0 1.2
150 MHz
1


Panasonic Electronic Components Datasheet

XN421L Datasheet

Silicon NPN epitaxial planer transistor

No Preview Available !

Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
XN421L
IC — VCE
240
Ta=25˚C
200
160
IB=1.0mA
120 0.8mA
0.6mA
80 0.4mA
40
0.2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
10
1
Ta=75˚C
25˚C
0.1
– 25˚C
0.01
1 3 10 30 100 300 1000
Collector current IC (mA)
hFE — IC
240
VCE=10V
200
160 Ta=75˚C
120 25˚C
– 25˚C
80
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1 3 10 30 100
Collector to base voltage VCB (V)
IO — VIN
100 VO=0.2V
Ta=25˚C
10
1
0.1
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2


Part Number XN421L
Description Silicon NPN epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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