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XN4506 Datasheet

NPN epitaxial planer transistor

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Composite Transistors
XN4506
NPN epitaxial planer transistor
For amplification of low frequency output
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SD1915(F) × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
50
20
25
300
500
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: EN
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
ON Resistance
*1 Ron test circuit
IB=1mA
VCEO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Ron*1
1k
IC = 1mA, IB = 0
VCB = 50V, IE = 0
VEB = 25V, IC = 0
VCE = 2V, IC = 4mA
IC = 30mA, IB = 3mA
VCE = 2V, IC = 4mA
VCB = 6V, IE = –4mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VB VA
VV
f=1kHz
V=0.3V
Ron=
VB
VA–VB
!1000()
min
20
500
typ max Unit
V
0.1 µA
0.1 µA
2500
0.1 V
0.6 V
80 MHz
7 pF
1.0
1


Panasonic Electronic Components Datasheet

XN4506 Datasheet

NPN epitaxial planer transistor

No Preview Available !

Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=10
1
0.1
Ta=75˚C
25˚C
0.01 –25˚C
0.001
0.1 1 10 100
Collector current IC (mA)
Cob — VCB
20 f=1MHz
Ta=25˚C
16
12
8
4
0
1 10 100
Collector to base voltage VCB (V)
IC — VCE
24
Ta=25˚C
20
IB=10µA
16
8µA
12
6µA
8 4µA
4 2µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2000
hFE — IC
VCE=2V
1600
1200
800
25˚C
Ta=75˚C
– 25˚C
400
0
0.1 1 10 100
Collector current IC (mA)
XN4506
IC — VBE
120
VCE=2V
100 25˚C
Ta=75˚C
80
– 25˚C
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
fT — IE
200 VCB=6V
Ta=25˚C
160
120
80
40
0
– 0.1
–1
–10 –100
Emitter current IE (mA)
2


Part Number XN4506
Description NPN epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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