* +0.1 +0.1 1 Composite Transistors PT
* Ta 500 80 Ta=25˚C XN5553 IC
* VCE 60 VCE=10V 50 25˚C IC
* VBE Total power dissipation PT (mW) Collector current IC (mA) 60 300 IB=100µA 80µA 60µA 50µA 40µA 30µA 20µA Collector current IC (mA) 400 40 Ta=75˚C
* 25˚C
XN5553
Panasonic Semiconductor
34.96 KB
Silicon npn epitaxial planer transistor.
Composite Transistors XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 0.65±0.15 2.8 0.3 +0.
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