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Panasonic Electronic Components Datasheet

XN6534 Datasheet

Silicon NPN epitaxial planer transistor

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Composite Transistors
XN6534
Silicon NPN epitaxial planer transistor
For high-frequency amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SC2404 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Ratings
30
20
3
15
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 7F
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Forward current transfer hFE ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Noise figure
Power gain
*1 Ratio between 2 elements
VCBO
VEBO
hFE
hFE (small/large)*1
VBE
Cre
fT
NF
PG
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 200MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz
min
30
3
40
0.5
450
typ max Unit
V
V
260
0.99
720 mV
0.8 1 pF
650 MHz
3.3 dB
24 dB
1


Panasonic Electronic Components Datasheet

XN6534 Datasheet

Silicon NPN epitaxial planer transistor

No Preview Available !

Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
12
Ta=25˚C
IB=100µA
10
80µA
8
60µA
6
40µA
4
20µA
2
0
0 4 8 12 16
Collector to emitter voltage VCE (V)
IC — VBE
30
VCE=6V
25 25˚C
Ta=75˚C –25˚C
20
15
10
5
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
25˚C
0.1 Ta=75˚C
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
1200
1000
fT — IE
VCB=6V
Ta=25˚C
800
600
400
200
0
–0.1 –0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
Zrb — IE
120
VCB=6V
f=2MHz
Ta=25˚C
100
80
60
40
20
0
–0.1 –0.3 –1 –3
–10
Emitter current IE (mA)
XN6534
IC — IB
12
VCE=6V
Ta=25˚C
10
8
6
4
2
0
0 40 80 120 160
Base current IB (µA)
hFE — IC
360
VCE=6V
300
240
Ta=75˚C
180
25˚C
120 –25˚C
60
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cre — VCE
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1 0.3 1 3 10 30 100
Collector to emitter voltage VCE (V)
2


Part Number XN6534
Description Silicon NPN epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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