* q q 1 2 3 5 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. 0.9± 0.1 4 s Basic Part Number of Element q s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol VGDO VGSO IG ID PT Tj Tstg Ratings
* 40
XP1D874
Panasonic Semiconductor
28.10 KB
N-channel junction fet.
Composite Transistors XP1D874 N-channel junction FET Unit: mm For low-frequency impedance conversion For infrared sensor 0.65 2.0±0.1 2.1±0.1 0.425.
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XP1D873 Silicon N-channel junction FET (Panasonic Semiconductor)
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