XP1D873
Panasonic Semiconductor
29.96 KB
Silicon n-channel junction fet.
Composite Transistors
XP1D873
Silicon N-channel junction FET
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12
* 0.02
+0.05
For analog swi.
* q q q 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings
* 50 30 10 150 15
📁 Related Datasheet
XP1D874 - N-channel junction FET
(Panasonic Semiconductor)
Composite Transistors
XP1D874
N-channel junction FET
Unit: mm
For low-frequency impedance conversion For infrared sensor
0.65 2.0±0.1
2.1±0.1 0.425.
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