XP1D874
Panasonic Semiconductor
28.10 KB
N-channel junction fet.
Composite Transistors
XP1D874
N-channel junction FET
Unit: mm
For low-frequency impedance conversi.
on For infrared sensor
0.65 2.0±0.1
2.1±0.1 0.425 1.25±0.1 0.425
0.65
s Features
q q
1 2 3
5
0.
📁 Related Datasheet
XP1D873 - Silicon N-channel junction FET
(Panasonic Semiconductor)
Composite Transistors
XP1D873
Silicon N-channel junction FET
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For analog switching
.
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17.0-24.0 GHz GaAs MMIC Power Amplifier
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May 2007 - Rev 02-May-07
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High Linearity Output Amplifier Balanced Desig.
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May 2005 - Rev 05-May-05
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High Linearity Wideband Amplifier On-Chip Tempera.
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27.0-35.0 GHz GaAs MMIC Power Amplifier
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Balanced Design Provides Good Input/Output Match .
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27.0-35.0 GHz GaAs MMIC Power Amplifier
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P1003-BD
Features
Balanced Design Provides Good Input/Output Match On-Chip Temper.
