* 1 2 3 6 5 4 0.9±0.1 q 2SK1103+UN1213 (transistors with built-in resistor) 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Gate to drain voltage Tr1 Drain current Gate current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation O
XP8081
Panasonic Semiconductor
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Silicon n-channel junction fet (tr1) silicon npn epitaxial planer transistor (tr2).
Composite Transistors XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 0.425 1.25±0.1 0.425 0.2±0.0.
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