Description
This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.
Features
- Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2.
- Low Operating Voltage VR = 45V.
- Anti-Reflection Coated to Enhance Responsivity at 900 nm.
- Hermetically-Sealed Packages.
- Spectral Response Range 400 to 1100 nm
Maximum Ratings, Absolute-Maximum Values (All Types)
DC Reverse Operating Voltage VR.
- .100 max. V Photocurrent Density, jp at 22°C: Average value, continuous operation.
- . . . . .5 mA/mm2 Peak valu.
C30810 Datasheet
