This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.
| Part number | VTE1295 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 27.96 KB |
| Description | GaAlAs Infrared Emitting Diodes |
| Datasheet |
 VTE1295 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| VTE180-2F32342 | Photoelectric sensors | SICK |
| VTE180-2F32444 | Photoelectric sensors | SICK |
| VTE180-2F32447 | Photoelectric sensors | SICK |
| VTE180-2F32449 | Photoelectric sensors | SICK |
| VTE180-2F32482 | Photoelectric sensors | SICK |
| Part Number | Description |
|---|---|
| VTE1291-1 | GaAlAs Infrared Emitting Diodes |
| VTE1291-2 | GaAlAs Infrared Emitting Diodes |
| VTE1291W-1 | GaAlAs Infrared Emitting Diodes |
| VTE1291W-2 | GaAlAs Infrared Emitting Diodes |
| VTE1261 | GaAlAs Infrared Emitting Diodes |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
