MZ0912B50Y transistor equivalent, npn microwave power transistor.
* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS.
Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silic.
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C.
handbook, halfpage
MZ0912B50Y
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