PJM03N10SQ - N-Channel MOSFET

Description

Fast Switching Low RDS(ON) and Gate Charge Low Reverse Transfer Capacitance Halogen and Antimony Free (HAF) Product is acquired

Features

VDS = 100V, ID = 3A.
RDS(ON) ＜ 140 mΩ (@VGS=10V).
MSL: 1 Level.

Ping Jing

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Datasheet Details

Part number	PJM03N10SQ
Manufacturer	Ping Jing
File Size	1.09 MB
Description	N-Channel MOSFET
Datasheet	PJM03N10SQ Datasheet
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Descriptions  Fast Switching  Low RDS(ON) and Gate Charge  Low Reverse Transfer Capacitance  Halogen and Antimony Free (HAF) Product is acquired Features  VDS = 100V, ID = 3A  RDS(ON) ＜ 140 mΩ (@VGS=10V)  MSL: 1 Level Applications  Load Switch  PWM Applications Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation 1 Junction and Storage Temperature Range Maximum Junction-to-Ambient Symbol VDSS VGSS ID IDM PD TJ, TSTG RθJA PJM03N10SQ N-Channel MOSFET SOT-89 Mark: 0103M Schematic Diagram Drain Gate Source Value 100 ±20 3 20 0.5 150, -55 to 150 250 Units V V A A W °C °C/W www.pingjingsemi.com Revision：1.

Published: Feb 22, 2019 |