PJM50H30NTH - N-Channel Power MOSFET

Features

Advanced Planar Process.
RDS(ON), typ. =150mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Rugged Poly Silicon Gate Structure.

Ping Jing

Datasheet Details

Part number	PJM50H30NTH
Manufacturer	Ping Jing
File Size	488.50 KB
Description	N-Channel Power MOSFET
Datasheet	PJM50H30NTH Datasheet
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Full PDF Text Transcription

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Features  Advanced Planar Process  RDS(ON), typ.=150mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Rugged Poly Silicon Gate Structure Applications  BLDC Motor Driver  Electric Welder  High Efficiency SMPS PJM50H30NTH N-Channel Power MOSFET TO-3PN G DS D Absolute Maximum Ratings Ratings at TC = 25℃ unless otherwise specified. Parameter Drain-to-Source Voltage Continuous Drain Current TC=100 ℃ Pulsed Drain Current Note 1 Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery Note 2 Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Note: 1. Repetitive rating; pulse width limited by maximum junction temperature. 2. Package limited current. 3.

Published: Feb 22, 2019 |