PJM50H30NTH Key Features
- Advanced Planar Process
- RDS(ON), typ.=150mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Rugged Poly Silicon Gate Structure
- Part: PJM50H30NTH
- Manufacturer: Ping Jing
- Size: 488.50 KB
Related Ping Jing Datasheets
| Part Number | Description |
|---|---|
| PJM03N10SQ | N-Channel MOSFET |
| PJM10C30PA | N and P-Channel Complementary Power MOSFET |
| PJM10H05NST | N-MOS |
| PJM10H10NTE | N-Channel Enhancement Mode Power MOSFET |
| PJM2300NSA | N-Channel MOSFET |
PJM50H30NTH Description
Features Advanced Planar Process RDS(ON), typ.=150mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly Silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS PJM50H30NTH N-Channel Power MOSFET TO-3PN G DS D Ratings Ratings at TC = 25℃ unless otherwise specified. Parameter Drain-to-Source Voltage Continuous Drain Current TC=100 ℃ Pulsed Drain Current Note 1 Gate-to-Source...