PJM80H04NTE mosfet equivalent, n-channel mosfet.
* VDS = 800V, ID = 4A
* RDS(ON) < 3.6 Ω (@VGS=10V)
* ESD Protected > 4kV (HBM)
* MSL: 1 Level
Applications
* Power Switch
* Adaptor, Charger
Abso.
* Power Switch
* Adaptor, Charger
Absolute Maximum Ratings
Ratings at TC =25℃ unless otherwise specified.
Param.
* Fast Switching
* Low RDS(ON) and Gate Charge
* Low Reverse Transfer Capacitance
* 100% Single Pluse Avanlanche Energy Test
Features
* VDS = 800V, ID = 4A
* RDS(ON) < 3.6 Ω (@VGS=10V)
* ESD Protected > 4kV (HBM)
* M.
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