PJM80H04NTE Key Features
- VDS = 800V, ID = 4A
- RDS(ON) ＜ 3.6 Ω (@VGS=10V)
- ESD Protected ＞ 4kV (HBM)
- MSL: 1 Level
- Part: PJM80H04NTE
- Manufacturer: Ping Jing
- Size: 1.26 MB
Related Ping Jing Datasheets
| Part Number | Description |
|---|---|
| PJM03N10SQ | N-Channel MOSFET |
| PJM10C30PA | N and P-Channel Complementary Power MOSFET |
| PJM10H05NST | N-MOS |
| PJM10H10NTE | N-Channel Enhancement Mode Power MOSFET |
| PJM2300NSA | N-Channel MOSFET |
PJM80H04NTE Description
Descriptions Fast Switching Low RDS(ON) and Gate Charge Low Reverse Transfer Capacitance 100% Single Pluse Avanlanche Energy Test.