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F2012 Datasheet, Polyfet RF Devices

F2012 Datasheet, Polyfet RF Devices

F2012

datasheet Download (Size : 37.56KB)

F2012 Datasheet

F2012 transistor equivalent, patented gold metalized silicon gate enhancement mode rf power vdmos transistor.

F2012

datasheet Download (Size : 37.56KB)

F2012 Datasheet

Features and benefits

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE.

Application

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and other.

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal f.

Image gallery

F2012 Page 1 F2012 Page 2

TAGS

F2012
PATENTED
GOLD
METALIZED
SILICON
GATE
ENHANCEMENT
MODE
POWER
VDMOS
TRANSISTOR
Polyfet RF Devices

Manufacturer


Polyfet RF Devices

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